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| HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead current limit TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C Maximum Ratings 85 85 20 30 180 76 720 180 60 3 5 400 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A mJ J V/ns W C C C C V~ g VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW trr 250 ns ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<25pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * Easy assembly * Space savings * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 85 2.0 4.0 100 TJ = 25C TJ = 125C 100 2 7 V V nA mA mA mW VDSS VGS(th) IGSS IDS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. 98638 (7/99) (c) 2000 IXYS All rights reserved 1-2 IXFR 180N085 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 55 90 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 4000 2000 65 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 1 W (External) 90 140 55 320 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 65 170 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 60A Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 180 720 1.3 250 A A V ns mC A IF = 50A,-di/dt = 100 A/ms, VR = 50 V 1.2 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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